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NAND-Flash-Roadmap

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NAND-Flash-Roadmap
Tech Roadmap Update
(Flash)
Introduction
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NAND Flash is a rapidly changing technology and market, and
promises to be very interesting as the process node approaches 10
nm. At this point, physical constraints will begin to limit the
performance of the basic memory cell design.
As a result, looking more the two years into the future becomes a
purely speculative exercise and we limit our projections to 2014.
Contact us for more information:
• http://www.techinsights.com/company/contact-us/
• 1-613-599-6500
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Flash memory Roadmap
Overall (Tech. Node @Mass-Production)
Manufacturer
2010
2011
2012
2013
2014
ITRS Flash Roadmap
(2011 Updated Ver.)
32 nm
22 nm
20 nm
18 nm
16 nm
27 nm
21 nm (1)
(MLC,
TLC)
16 nm (7,8)
(eMMC 4.5)
16 nm (8)
(@China)
3D: TCAT
25 nm
20 nm (6)
(MLC,
HKMG)
20 nm (4)
(TLC)
18 nm (8)
N/A
43 nm
32 nm
24 nm
19 nm
(MLC,
TLC)
2D: 1Y nm
(256 Gb) (3,5)
3D: BiCS (128 Gb,
32 layers, PTS) (3)
2D: 1Z nm (512 Gb)
3D: BiCS (256Gb, 32
layers, ES) (3)
46 nm
35 nm
26 nm
20 nm (2)
(MLC)
15 nm (8,9)
(MLC)
N/A
35 nm
32 nm
34 nm
25 nm
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Flash memory Roadmap
ITRS Tech. Roadmap (2011 Updated ver.)
Source: ITRS
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Flash memory Roadmap
Overall (Tech. Node @Mass-Production)
Source: Chinamarket.com
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Flash memory Roadmap
Overall (Current Mass-Production
Situation)
Source: Chinamarket.com
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Flash memory Roadmap
Overall (Current Mass-Production
Situation)
Source: Micron, Aug. 2012
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Flash memory Roadmap
Samsung _ I
In 2009, Samsung described its 3D NAND technology based
on a terabit cell array transistor (TCAT). A year later, Macronix
talked about a BE-SONOS charge-trapping technology. And
Hynix is developing a 3D dual control-gate with a surrounding
floating-gate.
http://semimd.com/blog/2012/08/16/what%E2%80%99s-after-nand-flash/
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Samsung _ II
Samsung Electronics Comp., Ltd. offered up some exciting news today, revealing that it had
started production of 10 nm-class (10-19 nm) NAND for eMMC, taking mobile storage to new
levels of "tiny". The new 64 GB NAND Flash storage chips, which are built on the eMMC 4.5
standard, which Samsung basically wrote itself, offer random writes of 2,000 IOPS (input-output
operations per second), random reads of 5,000 IOPS, sequential reads at 260 MB/s, and
sequential write speeds of 50 MB/s. Those stats are about 30 percent up from the firstgeneration eMMC 4.5 devices (mature 20 nm product). More good news for Samsung is that it
was able to repurpose its 20 nm lines to produce the 10 nm-class chips. It says the process
compatibility is expected to increase its manufacturing yields around 30 percent.
http://www.dailytech.com/Samsung+Starts+Production+of+10+nmClass+Tab
let+Smartphone+Flash+Chips/article29202.htm
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Samsung _ III
Source: Nikkei BP, 2011
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Flash memory Roadmap
IMFT (Micron/Intel) _ I
SandForce's controllers have fairly broad compatibility with NAND available on the market today.
It shouldn't be a surprise that the first demo we saw of Toshiba's 19nm and Intel/Micron's 20nm
NAND was at the SandForce/LSI suite in the Grand Hyatt in Taipei.
Even though 19nm/20nm 64Gbit devices aren't very different from their predecessors, they still
require custom firmware support for many reasons including dealing with different program times.
Intel and Micron have told us that they expect similar endurance from their 20nm NAND as we
currently see with their 25nm offerings.
The demo we saw was a simple Iometer test on both platforms. SandForce built SF-2000 drives
using NAND from Intel, Micron and Toshiba. The Intel part number hasn't changed much from the
25nm generation. The table below highlights the differences:
The last F actually indicates that we're looking at a 20nm part, while the 3 actually refers to
generation which seems to have been incremented along with the process node identifier.
http://www.anandtech.com/show/5960/sandforce-demos-19nm-toshiba-20nm-imft-nand-flash
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NAND Flash Roadmap
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Toshiba/Sandisk _ I
The 3D NAND industry emerged in 2007, when Toshiba unveiled its Bit Cost
Scalable (BiCS) technology. BiCs makes use of a “punch-and plug” structure
and charge trap memory films. Toshiba has fabricated a prototype 32-Gbit
BiCS flash memory test array with a 16-layer memory cell using 60nm design
rules.
http://semimd.com/blog/2012/08/16/what%E2%80%99s-after-nand-flash/
Toshiba plans to ship 128-Gbit or 256-Gbit prototype samples (PTSes) in 2013
and engineering samples (ESes) in 2014 and start volume production in 2015.
The company intends to realize a 512-Gbit product in 2015 and continue the
development in the aim of realizing 1 Tbit or higher capacity. At the same time,
Toshiba will scale down its process technology for NAND flash memories
having a two-dimensional structure, planning to ship samples of 1Ynm
products in 2012 and 1Znm products in 2013.
http://techon.nikkeibp.co.jp/english/NEWS_EN/20120713/228338/
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Toshiba/Sandisk _ II
http://savolainen.wordpress.com/
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Toshiba/Sandisk _ III
http://savolainen.wordpress.com/
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Toshiba/Sandisk _ III
Source: Nikkei BP, 2011
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Flash memory Roadmap
SK-Hynix _ I
SK-Hynix takes NAND to 15-nm
While many experts have expressed doubts about the ability
of flash memory to scale and indicated the need for an
alternative non-volatile memory technology, SK-Hynix has
just gone ahead and produced a 15-nm NAND flash memory
cell which it plans to unveil at this year's International
Electron Devices Meeting (IEDM).
http://www.eetimes.com/electronics-news/4227389/Hynix-NAND-flash-memory-IEDM
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SK-Hynix _ II
MLC NAND Mass-Products (Schedule)
Source: SK-Hynix
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Glossary
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BiCS- pipe-shaped Bit Cost Scalable flash. A 3D NAND cell being developed by
Toshiba.
eMMC- Embedded Multimedia Card. A 1997 standard combining NAND Flash
and Controller.
HKMG- High K Metal Gate. An advance technology designed to replace silicon
dioxide and at small process nodes.
ITRS- International Technology Roadmap for Semiconductors.
MLC- Multilevel Cell. A NAND memory cell that stores more than one bit of
information.
TCAT- Terabit Array Transistor. A 3D NAND cell architecture.
TLC- Triple Level Cell. A NAND memory cell that stores three bits of
information.
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Sources
(1) http://www.xbitlabs.com/news/storage/display/20120925215333_Samsung_Reveals_
Solid_State_Drives_Based_on_21nm_NAND_Flash_Memory.html
(2) http://en.chinaflashmarket.com/Uploads/file/2012%20NAND%20Flash%20market%2
0annual%20report.pdf
(3) http://techon.nikkeibp.co.jp/english/NEWS_EN/20120713/228338/
(4) http://www.eetimes.com/design/memory-design/4407053/Micron-launches-128-GbitNAND-flash
(5) http://savolainen.wordpress.com/2011/07/03/nand-technology-roadmap/
(6) http://www.techspot.com/news/50643-intel-begins-shipping-335-series-ssds-with20nm-mlc-nand.html
(7) http://www.dailytech.com/Samsung+Starts+Production+of+10+nmClass+Tablet+Sma
rtphone+Flash+Chips/article29202.htm
(8) www.chinaflashmarket.com
(9) http://www.eetimes.com/electronics-news/4227389/Hynix-NAND-flash-memory-IEDM
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